Modeling of hydrogen diffusion in n- and p-type siliconMATHIOT, D.Physical review. B, Condensed matter. 1989, Vol 40, Num 8, pp 5867-5870, issn 0163-1829, 4 p.Article

Thermal donor formation in silicon: a new kinetic model based on self-interstitial aggregationMATHIOT, D.Applied physics letters. 1987, Vol 51, Num 12, pp 904-906, issn 0003-6951Article

Gold, self-, and dopant diffusion in siliconMATHIOT, D.Physical review. B, Condensed matter. 1992, Vol 45, Num 23, pp 13345-13355, issn 0163-1829Article

Quenched-in defect removal through silicide formation by rapid thermal processingMATHIOT, D.Applied physics letters. 1991, Vol 58, Num 2, pp 131-133, issn 0003-6951Article

Cobalt related levels in P and (P+B) doped n-type silicon: possible observation of the (CoB) pairMATHIOT, D.Journal of applied physics. 1989, Vol 65, Num 4, pp 1554-1558, issn 0021-8979Article

A MODEL FOR THE DETERMINATION OF THE DEFECT CONCENTRATIONS IN III-V COMPOUNDS. THE CASE OF GASBEDELIN G; MATHIOT D.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 42; NO 1; PP. 95-110; BIBL. 36 REF.Article

INFLUENCE OF THE NONEQUILIBRIUM VACANCIES ON THE DIFFUSION OF PHOSPHORUS INTO SILICONMATHIOT D; PFISTER JC.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3053-3058; BIBL. 11 REF.Article

HIGH CONCENTRATION DIFFUSION OF P IN SI: A PERCOLATION PROBLEM.MATHIOT D; PFISTER JC.1982; J. PHYS., LETT.; ISSN 0302-072X; FRA; DA. 1982; VOL. 43; NO 12; PP. L453-L459; BIBL. 16 REF.Article

DIFFUSION OF INDIUM IN GASBMATHIOT D; EDELIN G.1980; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1980; VOL. 41; NO 4; PP. 447-458; BIBL. 14 REF.Article

Solubility enhancement of metallic impurities in silicon by rapid thermal annealingMATHIOT, D; BERBIER, D.Journal of applied physics. 1991, Vol 69, Num 7, pp 3878-3881, issn 0021-8979, 4 p.Article

Dopant diffusion in silicon: a consistent view involving nonequilibrium defectsMATHIOT, D; PFISTER, J. C.Journal of applied physics. 1984, Vol 55, Num 10, pp 3518-3530, issn 0021-8979Article

Kinetics of arsenic segregation at grain boundaries in polycrystalline siliconNEDELEC, S; MATHIOT, D.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1438-1445, issn 0268-1242Article

Titanium diffusion in siliconHOCINE, S; MATHIOT, D.Applied physics letters. 1988, Vol 53, Num 14, pp 1269-1271, issn 0003-6951Article

Point defect kinetics and dopant diffusion during silicon oxidationMATHIOT, D; PFISTER, J. C.Applied physics letters. 1986, Vol 48, Num 10, pp 627-629, issn 0003-6951Article

Deep level transient spectroscopy characterization of tungsten-related deep levels in siliconBOUGHABA, S; MATHIOT, D.Journal of applied physics. 1991, Vol 69, Num 1, pp 278-283, issn 0021-8979, 6 p.Article

Modeling of dopant diffusion in silicon : an effective diffusivity approach including point-defect couplingsMATHIOT, D; MARTIN, S.Journal of applied physics. 1991, Vol 70, Num 6, pp 3071-3080, issn 0021-8979Article

Dopant redistribution in heavily doped silicon: confirmation of the validity of the vacancy-percolation modelMATHIOT, D; PFISTER, J. C.Journal of applied physics. 1989, Vol 66, Num 2, pp 970-972, issn 0021-8979, 3 p.Article

Titanium-related deep levels in silicon: a reexaminationMATHIOT, D; HOCINE, S.Journal of applied physics. 1989, Vol 66, Num 12, pp 5862-5867, issn 0021-8979Article

Evidences that P diffusion in Si is assisted mainly by vacanciesMATHIOT, D; PFISTER, J. C.Applied physics letters. 1985, Vol 47, Num 9, pp 962-964, issn 0003-6951Article

Diffusion of arsenic in silicon: validity of the percolation modelMATHIOT, D; PFISTER, J. C.Applied physics letters. 1983, Vol 42, Num 12, pp 1043-1044, issn 0003-6951Article

Measurement of positron mobility in Si at 30-300 KMAKINEN, J; CORBEL, C; HAUTOJARVI, P et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 14, pp 12114-12117, issn 0163-1829, 4 p.Article

Boron diffusion through thin gate oxides : influence of nitridation and effect on the Si/SiO₂ interface electrical characteristicsMATHIOT, D; STRABONI, A; ANDRE, E et al.Journal of applied physics. 1993, Vol 73, Num 12, pp 8215-8220, issn 0021-8979Article

Electrical characterization of silicon epitaxial layers grown by limited reaction processingMATHIOT, D; REGOLINI, J. L; DUTARTRE, D et al.Journal of applied physics. 1991, Vol 69, Num 1, pp 358-361, issn 0021-8979, 4 p.Article

Deep-level transient spectroscopic characterization of silicon-silicon interfacesSTIEVENARD, D; WALLART, X; MATHIOT, D et al.Journal of applied physics. 1991, Vol 69, Num 11, pp 7640-7644, issn 0021-8979, 5 p.Article

Metallic contamination in silicon during plasma resist stripping: a deep level transient spectroscopy studyJOUBERT, O; MATHIOT, D; PELLETIER, J et al.Applied physics letters. 1989, Vol 54, Num 22, pp 2241-2243, issn 0003-6951, 3 p.Article